Study of factors limiting electron mobility in InSb quantum wells
Identifieur interne : 014026 ( Main/Repository ); précédent : 014025; suivant : 014027Study of factors limiting electron mobility in InSb quantum wells
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Abstract
We observe a significant increase in InSb quantum-well mobility when remote doping of Al0.09In0.91Sb barriers is accomplished by three layers, rather than one layer, of Si δ doping. At 7 K, the electron mobility in single quantum-well structures grown on GaAs substrates is as high as 280000 cm2/Vs with an electron density of 2.33×1011cm-2. The density of oriented abrupt steps and square-mound features on the sample surface correlates with the electron mobility in the well. © 1999 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Study of factors limiting electron mobility in InSb quantum wells</title><author><name sortKey="Chung, S J" uniqKey="Chung S">S. J. Chung</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Goldammer, K J" uniqKey="Goldammer K">K. J. Goldammer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Lindstrom, S C" uniqKey="Lindstrom S">S. C. Lindstrom</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Johnson, M B" uniqKey="Johnson M">M. B. Johnson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Santos, M B" uniqKey="Santos M">M. B. Santos</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0261740</idno><date when="1999-05">1999-05</date><idno type="stanalyst">PASCAL 99-0261740 AIP</idno><idno type="RBID">Pascal:99-0261740</idno><idno type="wicri:Area/Main/Corpus">015043</idno><idno type="wicri:Area/Main/Repository">014026</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron mobility</term><term>Experimental study</term><term>Hall mobility</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor quantum wells</term><term>Surface structure</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>7350D</term><term>7350J</term><term>6865</term><term>Etude expérimentale</term><term>Indium composé</term><term>Mobilité électron</term><term>Mobilité Hall</term><term>Puits quantique semiconducteur</term><term>Semiconducteur III-V</term><term>Structure surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We observe a significant increase in InSb quantum-well mobility when remote doping of Al<sub>0.09</sub>In<sub>0.91</sub>Sb barriers is accomplished by three layers, rather than one layer, of Si δ doping. At 7 K, the electron mobility in single quantum-well structures grown on GaAs substrates is as high as 280000 cm<sup>2</sup>/Vs with an electron density of 2.33×10<sup>11</sup>cm<sup>-2</sup>. The density of oriented abrupt steps and square-mound features on the sample surface correlates with the electron mobility in the well. © 1999 American Vacuum Society.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>17</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Study of factors limiting electron mobility in InSb quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>CHUNG (S. J.)</s1></fA11><fA11 i1="02" i2="1"><s1>GOLDAMMER (K. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>LINDSTROM (S. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>JOHNSON (M. B.)</s1></fA11><fA11 i1="05" i2="1"><s1>SANTOS (M. B.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>1151-1154</s1></fA20><fA21><s1>1999-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992 B</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0261740</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We observe a significant increase in InSb quantum-well mobility when remote doping of Al<sub>0.09</sub>In<sub>0.91</sub>Sb barriers is accomplished by three layers, rather than one layer, of Si δ doping. At 7 K, the electron mobility in single quantum-well structures grown on GaAs substrates is as high as 280000 cm<sup>2</sup>/Vs with an electron density of 2.33×10<sup>11</sup>cm<sup>-2</sup>. 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